1. Isku-dhafka Solvothermal
1. Ceyriinsaamiga alaabta?
Budada Zinc iyo budada selenium waa la isku qasan yahay 1:1 saamiga molar, iyo biyaha deionized ama ethylene glycol ayaa lagu daraa sida dhexdhexaadiyaha 35.
2018-03-23 121 2 .Xaaladaha falcelinta
o Heerkulka falcelinta: 180-220°C
o Waqtiga falcelinta: 12-24 saacadood
o Cadaadis: Ku ilaali cadaadiska iskiis u dhashay ee kiliyaha falcelinta xiran
Isku dhafka tooska ah ee zinc iyo selenium waxaa fududeeyay kuleylka si loo dhaliyo nanoscale zinc selenide crystals 35.
3.Habka daawaynta ka dib?
Falcelinta ka dib, waa la kala saaray, waxaa lagu dhaqay ammonia la walaaqo (80 ° C), methanol, iyo faakuum la qalajiyey (120 ° C, P₂O₅).btainbudo> 99.9% daahirnimo 13.
2. Habka dhigista uumiga kiimikada
1.Kahor daawayn alaabta ceeriin
o Nadiifinta walxaha cayriin ee zinc waa ≥ 99.99% waxaana lagu dhejiyaa qolof garaafeed
o Gaaska Hydrogen selenide waxa lagu qaadaa gaaska argon6.
2018-03-23 121 2 .Xakamaynta heerkulka
o Aagga uumiga Zinc: 850-900°C
o Aagga dhigista: 450-500°C
Dhigista jihada ee uumiga zinc iyo hydrogen selenide ee heerkulbeegga 6.
3 .Halbeegyada gaaska
o socodka Argon: 5-10 l/min
o Cadaadiska qayb ka mid ah hydrogen selenide:0.1-0.3 atm
Heerarka dhigista waxay gaari karaan 0.5-1.2 mm/h, taasoo keentay in la sameeyo 60-100 mm qaro weyn oo ah polycrystalline zinc selenide 6.
3. Habka isku-dhafka tooska ah ee wejiga adag
1. Ceyriinwax ka qabashada?
Xalka zinc chloride waxaa lagu falceliyay xalka oxalic acid si loo sameeyo roobka zinc oxalate, kaas oo la qalajiyey oo la miiray oo lagu qasi jiray budada selenium ee saamiga 1: 1.05 molar 4.
2018-03-23 121 2 .Qiyaasaha falcelinta kulaylka
o Heerkulka foornada tuubada Vacuum: 600-650°C
o Hayso wakhtiga diiran: 4-6 saacadood
Budada selenide ee Zinc leh cabirka qayb ka mid ah 2-10 μm waxa dhaliya falcelinta fidinta wejiga adag 4.
Isbarbardhigga hababka muhiimka ah
| habka | Muuqaal muuqaaleedka alaabta | Cabbirka walxaha/dhumucdiisuna | Crystallinity | Goobaha codsiga |
| Habka Solvothermal 35 | Nanoballs / ulo | 20-100 nm | sphalerite cubic | Qalabka Optoelectronic |
| Uumi-dhigista 6 | Baloogyada polycrystalline | 60-100 mm | Qaab dhismeedka laba geesoodka ah | Infrared optics |
| Habka weji adag 4 | Budada cabbirkoodu yar yahay | 2-10 μm | Marxaladda cubic | Hordhacyada walxaha infrared |
Qodobbada muhiimka ah ee xakamaynta habka gaarka ah: habka solvothermal wuxuu u baahan yahay inuu ku daro surfactants sida oleic acid si loo habeeyo qaab-dhismeedka 5, iyo kaydinta uumiga wuxuu u baahan yahay qallafsanaanta substrate si ay u noqoto
1. Soo dhigidda uumiga jirka (PVD).
11 .Jidka Tignoolajiyada
o Walaxda cayriin ee Zinc selenide waxa lagu soo daadiyaa meel faaruq ah waxaana lagu shubaa dusha sare ee substrate iyadoo la isticmaalayo tignoolajiyada uumiga kuleylka12.
o Ilaha uumiga ee zinc iyo selenium waxaa lagu kululeeyaa heerkul kala duwan (aagga uumiga zinc: 800-850 ° C, aagga uumiga selenium: 450-500 °C), saamiga stoichiometric waxaa lagu xakameynayaa iyadoo la xakameynayo heerka uumiga.?12
2018-03-23 121 2 .Xakamaynta qiyaasta
o Vacuum: ≤1×10⁻³ Pa
o Heerkulka asalka ah: 200-400 ° C
o Heerka dhigaalka:0.2-1.0 nm/s
Filimada Zinc selenide oo dhumucdiisu tahay 50-500 nm ayaa loo diyaarin karaa in loo isticmaalo infrared optics 25.
2. Habka wax lagu shiilo ee makaanikada
1.Wax ka qabashada alaabta ceeriin
o Budada Zinc (nadiifinta≥99.9%) waxaa lagu qasaa budada selenium marka loo eego cabirka 1:1 molar waxaana lagu shubaa weel wax lagu shubo oo birta ah..
2018-03-23 121 2 .Halbeegyada habka
o Waqtiga kubbadda shiida: 10-20 saacadood
Xawaaraha: 300-500 rpm
o Saamiga Pellet: 10:1 (kubadaha wax shiida ee zirconia).
Zinc selenide nanoparticles oo leh cabbirka qayb ka mid ah 50-200 nm ayaa lagu abuuray falcelin farsamo oo farsamo, oo leh nadiif ah> 99% 23.
3. Habka sinteering cadaadis kulul
11 .Diyaarinta horudhaca
o Zinc selenide nanopowder (xajmiga qayb <100 nm) oo lagu farsameeyay habka solvothermal sida alaabta ceeriin 4.
2018-03-23 121 2 .Halbeegyada sinta
o Heerkulka: 800-1000C
o Cadaadiska: 30-50 MPa
o Kuleyl: 2-4 saacadood
Alaabtu waxay leedahay cufnaanta> 98% waxaana loo habayn karaa qaybo muuqaal ah oo qaabaysan sida daaqadaha infrared ama lenses 45.
4. Epitaxy beam molecular (MBE).
1.vacuum deegaanka aadka u sarreeya
o Vacuum: ≤1×10⁻ Pa
o Alwaaxyada molecular ee zinc iyo selenium waxay si sax ah u xakameeyaan socodka qulqulka isha uumiga alwaax elektarooniga ah6.
2.Qiyaasaha koritaanka
o Heerkulka saldhiga: 300-500C (GaAs ama sapphire substrates ayaa inta badan la isticmaalaa).
o Heerka kobaca:0.1-0.5 nm/s
Hal-crystal zinc filimada khafiifka ah ee selenide waxaa lagu diyaarin karaa inta u dhaxaysa dhumucda 0.1-5 μm ee aaladaha indhaha ee saxda ah ee saxda ah56.
Waqtiga boostada: Abriil-23-2025