1. Sameynta Solvothermal-ka
1. Cayriinsaamiga walxaha?
Budada zinc iyo budada selenium waxaa lagu qasaa saamiga molar ee 1:1, biyaha la dhalaaliyay ama ethylene glycol ayaa lagu daraa dareeraha dareeraha ah..
2.Xaaladaha falcelinta
Heerkulka falcelinta: 180-220°C
o Waqtiga falcelinta: 12-24 saacadood
o Cadaadiska: Ku hay cadaadiska iskiis u soo baxa ee ku jira weelka falcelinta ee xiran
Isku-darka tooska ah ee zinc iyo selenium waxaa fududeeya kuleylinta si loo soo saaro nanoscale zinc selenide kiristaalo 35.
3.Habka daaweynta kadib?
Ka dib falgalka, waxaa lagu shubay centrifuge, lagu dhaqay ammonia khafiif ah (80 °C), methanol, ka dibna lagu qalajiyey faakiyuum (120 °C, P₂O₅).tainbudo > 99.9% daahirnimo 13.
2. Habka kaydinta uumiga kiimikada
1.Daaweynta hore ee alaabta ceeriin ah
o Nadiifnimada walaxda ceeriin ee zinc-ku waa ≥ 99.99% waxaana lagu dhejiyay graphite crucible
o Gaaska haydarojiin selenide waxaa qaada gaaska argon ee qaada6.
2.Xakamaynta heerkulka
Aagga uumi-baxa Zinc: 850-900°C
o Aagga dhigista: 450-500°C
Dhigista jihada ee uumiga zinc iyo hydrogen selenide iyadoo loo eegayo heerkulka heerka 6.
3.Xuduudaha gaaska
o Socodka Argon: 5-10 L/daqiiqo
o Cadaadis qayb ahaan ah oo ah hydrogen selenide:0.1-0.3 atm
Heerarka dhigista waxay gaari karaan 0.5-1.2 mm/saacaddii, taasoo keenta sameynta polycrystalline zinc selenide oo dhumucdiisu tahay 60-100 mm..
3. Habka isku-darka tooska ah ee wejiga adag
1. Cayriinmaaraynta agabka?
Xalka zinc chloride waxaa lagu falceliyay xalka oxalic acid si loo sameeyo zinc oxalate soo daatay, kaas oo la qalajiyey oo la shiiday oo lagu qasay budada selenium oo leh saamiga 1: 1.05 molar 4..
2.Xuduudaha falgalka kulaylka
Heerkulka foornada tuubada faakuumka: 600-650°C
o Waqtiga diirimaadka ilaali: 4-6 saacadood
Budada selenide ee zinc oo leh cabbir walax ah oo ah 2-10 μm waxaa soo saara falgalka faafinta wejiga adag 4.
Isbarbardhigga hababka muhiimka ah
| hab | Qaab-dhismeedka badeecada | Cabbirka walxaha/dhumucdiisuna waa | Crystallinity | Meelaha codsiga |
| Habka Xalka Tamarta 35 | Kubbado Nano/ulaha | 20-100 nm | Sphalerite cubic ah | Aaladaha elektiroonigga ah ee Optoelectronic |
| Kaydinta uumiga 6 | Baloogyada Polycrystalline | 60-100 mm | Qaab-dhismeedka lix-geesoodka ah | Muraayadaha Infrared-ka |
| Habka wejiga adag 4 | Budada cabbirka yar | 2-10 μm | Marxalad saddexjibbaaran | Horudhacyada walxaha infrared-ka |
Qodobbada muhiimka ah ee xakamaynta habka gaarka ah: habka solvothermal wuxuu u baahan yahay inuu ku daro walxaha surfactants sida oleic acid si loo xakameeyo qaab-dhismeedka 5, iyo uumiga dhigista waxay u baahan tahay in qallafsanaanta substrate-ka ay noqoto < Ra20 si loo hubiyo isku-dhafka dhigista 6.
1. Dhigista uumiga jirka (PVD).
1.Wadada Teknolojiyadda
o Walxaha ceeriin ee zinc selenide ayaa lagu uumi saaraa jawi faaruq ah waxaana lagu shubaa dusha sare ee substrate-ka iyadoo la adeegsanayo farsamada uumi-baxa kulaylka ama sputtering technology12.
o Ilaha uumi-baxa ee zinc iyo selenium waxaa lagu kululeeyaa heerarka heerkulka kala duwan (aagga uumi-baxa zinc: 800–850 °C, aagga uumi-baxa selenium: 450–500 °C), saamiga stoichiometric-na waxaa lagu xakameeyaa iyadoo la xakameynayo heerka uumi-baxa?12.
2.Xakamaynta xuduudaha
o Faakiyuum: ≤1×10⁻³ Pa
Heerkulka aasaasiga ah: 200–400°C
Heerka dhigaalka:0.2–1.0 nm/s
Filimada zinc selenide oo dhumucdoodu tahay 50–500 nm ayaa loo diyaarin karaa in loo isticmaalo indhaha infrared-ka 25.
2Habka farsamaynta kubbadda farsamada
1.Maareynta walxaha ceeriin ah
Budada Zinc (daahirnimo ≥99.9%) waxaa lagu qasaa budada selenium oo leh saamiga molar 1:1 waxaana lagu shubaa weel bir ah oo aan miridh lahayn 23.
2.Xuduudaha habka
o Waqtiga shiididda kubbadda: 10–20 saacadood
Xawaaraha: 300–500 rpm
o Saamiga Pellet: 10:1 (kubbadaha shiidi zirconia).
Nanoparticles-ka zinc selenide oo cabbirkoodu yahay 50–200 nm waxaa laga sameeyay falgallo farsamo oo isku-dhafan, oo leh daahirnimo >99% 23.
3. Habka kulul ee sintering-ka
1.Diyaarinta horudhaca ah
o Budada zinc selenide (cabirka walxaha < 100 nm) oo lagu sameeyay habka solvothermal sida walxo cayriin ah 4.
2.Xuduudaha Sintering
Heerkulka: 800–1000°C
Cadaadiska: 30–50 MPa
o Kuleyl: 2–4 saacadood
Badeecadu waxay leedahay cufnaan ka badan 98% waxaana loo farsamayn karaa qaybo muuqaal oo waaweyn sida daaqadaha infrared-ka ama muraayadaha indhaha 45.
4. Epitaxy-ga shucaaca molecular-ka (MBE).
1.Deegaan faakuum oo aad u sarreeya
o Faakiyuum: ≤1×10⁻⁷ Pa
o Falaadhaha molecular-ka ee zinc iyo selenium si sax ah ayay u xakameeyaan socodka iyada oo loo marayo isha uumi-baxa ee electron-ka6.
2.Xuduudaha koritaanka
Heerkulka salka: 300–500°C (GaAs ama substrate-ka safayr ayaa si caadi ah loo isticmaalaa).
Heerka kobaca:0.1–0.5 nm/s
Filimada khafiifka ah ee zinc selenide ee hal-kiristaal ah ayaa lagu diyaarin karaa dhumucda 0.1–5 μm aaladaha optoelectronic-ka ee saxsan56.
Waqtiga boostada: Abriil-23-2025