1. Hordhac

Zinc telluride (ZnTe) waa walax semiconductor kooxda II-VI muhiim ah oo leh qaab-dhismeedka bandgap toos ah. Heerkulka qolka, xad-dhaafkiisu waa qiyaastii 2.26eV, waxayna ka heleysaa codsiyo ballaaran oo ku jira aaladaha indhaha, unugyada qorraxda, qalabka shucaaca, iyo meelo kale. Maqaalkani wuxuu bixin doonaa hordhac faahfaahsan oo ku saabsan hababka kala duwan ee isku-dhafka ah ee zinc telluride, oo ay ku jiraan fal-celinta gobolka adag, gaadiidka uumiga, hababka xalka ku salaysan, epitaxy beam molecular, iwm. Hab kasta ayaa si fiican loo sharxi doonaa marka la eego mabaadi'da, hababka, faa'iidooyinka iyo faa'iido darrada, iyo tixgelinta muhiimka ah.

2. Habka Falcelinta Adag ee Gobolka ee ZnTe Synthesis

2.1 Mabda'a

Habka falcelinta gobolka adag waa habka ugu dhaqameed ee diyaarinta zinc telluride, halkaasoo zinc-nadiifinta sare iyo tellurium ay si toos ah uga falceliyaan heerkul sare si ay u sameeyaan ZnTe:

Zn + Te → ZnTe

2.2 Habka Faahfaahinta

2.2.1 Diyaarinta Qalabka Ceyriinka

1. Xulashada agabka: Isticmaal granul zinc-nadiifinta sare leh iyo kuuskuuska tellurium ee nadiifka ah ≥99.999% agab bilow ahaan.
2. Dawaynta Walaxda:
   • Daawaynta Zinc: Marka hore ku dhex milmi hydrochloric acid (5%) 1 daqiiqo si aad uga saarto oksaydhyada dusha sare, ku luqluq biyo deionized, ku maydh ethanol anhydrous ah, ugu dambayntii ku engeji foornada faakuumka 60°C ilaa 2 saacadood.
   • Daawaynta Tellurium: Marka hore ku quusi ​​aqua regia (HNO₃: HCl=1:3) 30 ilbiriqsi si aad uga saarto oksaydhyada dusha sare, ku raaci biyo deionized ilaa dhexdhexaad ah, ku maydh ethanol anhydrous ah, ugu dambayntii ku engeji foornada faakuumka 80°C ilaa 3 saacadood.
3. Miisaanka: Ku miisaan alaabta ceeriin ee saamiga stoichiometric (Zn: Te=1:1). Iyadoo la tixgelinayo isbeddelka zinc ee suurtogalka ah ee heerkulka sare, 2-3% dheeraad ah ayaa lagu dari karaa.

2.2.2 Isku-dhafka walxaha

1. Shiidida iyo Isku qas: Geli zinc iyo tellurium la miisaamay hoobiye agate ah oo ku shiid 30 daqiiqo sanduuqa galoofka ee argon ka buuxo ilaa si isku mid ah loo qaso.
2. Pelletizing: Ku rid budada isku qasan caaryada oo ku cadaadi pellets leh dhexroor 10-20mm oo hoos yimaada cadaadiska 10-15MPa.

2.2.3 Diyaarinta falcelinta markabka

1. Daawaynta Quartz Tube: Dooro tubooyinka quartz ee nadiifka ah (dhexroorka gudaha 20-30mm, dhumucda gidaarka 2-3mm), marka hore ku qooy aqua regia 24 saacadood, si fiican ugu raaci biyo deionized, oo ku engeji foornada 120 ° C.
2. Bixinta: Geli pellets alaabta ceeriin tubbada quartz, ku xidh nidaamka faakuumka, oo u daadgureyso ≤10⁻³Pa.
3. Xiritaanka: Ku xidh tuubada quartz adigoo isticmaalaya olol hydrogen-oxygen, adoo hubinaya dhererka daboolida ≥50mm ee hawo-mareenka.

2.2.4 Falcelinta Heerkulka Sare

1. Heerka Kululaynta Koowaad: Geli tuubada quartz ee xidhan foornada tuubada oo kulayl ilaa 400 ° C heerka 2-3°C/daqiiqo, haynaya 12 saacadood si loo ogolaado falcelinta bilowga ah ee u dhaxaysa zinc iyo tellurium.
2. Heerka Kululaynta Labaad: Sii wad kuleylka ilaa 950-1050C (ka hooseeya barta jilcinta quartz ee 1100°C) 1-2°C/daqiiqo, adigoo haya 24-48 saacadood.
3. Dhuux ruxidda: Inta lagu jiro heerka kulaylka sare, foornada u leexi 45° 2dii saacadoodba mar dhowr jeerna rux si aad u hubiso isku darka falcelinta.
4. Qaboojinta: Kadib dhamaystirka falcelinta, si tartiib ah ugu qabooji heerkulka qolka 0.5-1°C/daqiiqo si aad uga hortagto muunada dildilaaca cadaadiska kulaylka awgeed.

2.2.5 Habaynta Alaabta

1. Ka Saarida Alaabta: Ku fur tuubada quartz sanduuqa galoofyada oo ka saar sheyga falcelinta.
2. Shiidida: Ku celi alaabta budo si aad uga saarto wax kasta oo aan falcelin lahayn.
3. Annealing: Annealing budada at 600 ° C hoos jawi argon muddo 8 saacadood ah si loo yareeyo walbahaarka gudaha iyo horumarinta crystallinity.
4. Sifada: Samee XRD, SEM, EDS, iwm., si loo xaqiijiyo nadiifnimada wajiga iyo isku dhafka kiimikada.

2.3 Hagaajinta Halbeegga Habraaca

1. Xakamaynta heerkulka: Heerkulka falcelinta ugu fiicani waa 1000± 20°C. Heerkulka hoose wuxuu keeni karaa falcelin aan dhamaystirnayn, halka heerkulka sare uu keeni karo kacsanaanta zinc.
2. Xakamaynta Waqtiga: Wakhtiga haynta waa in ay ahaataa ≥24 saacadood si loo hubiyo falcelinta dhamaystiran.
3. Heerka qaboojinta: Qaboojin tartiib ah (0.5-1°C/daqiiqo) waxay soo saartaa badarka crystal ka weyn.

2.4 Falanqaynta Faa'iidooyinka iyo Khasaaraha

Faa'iidooyinka:

• Habka fudud, shuruudaha qalabka hooseeya
• Ku haboon wax soo saarka dufcaddii
• Nadiifinta alaabta sare

Khasaaraha:

• Heerkulka falcelinta sare, isticmaalka tamarta sare
• Qaybinta cabbirka hadhuudhka ee aan lebbiska ahayn
• Waxa ku jiri kara xaddi yar oo walxo aan falcelin lahayn

3. Habka Gaadiidka Uumiga ee ZnTe Synthesis

3.1 Mabda'a

Habka gaadiidka uumiga wuxuu isticmaalaa gaasta qaade si loogu qaado uumiga fal-celiska ah aagga heerkulka hooseeya ee dhigista, gaarista korriinka jihada ee ZnTe iyadoo la xakameynayo heerkulbeegyada. Iodine waxaa badanaa loo isticmaalaa sida wakiilka gaadiidka:

ZnTe(yada) + I₂(g) ⇌ ZnI₂(g) + 1/2Te₂(g)

3.2 Habka Faahfaahinta

3.2.1 Diyaarinta Qalabka Ceyriinka

1. Xulashada agabka: Isticmaal budada ZnTe ee nadiifka ah (nadiifinta ≥99.999%) ama budada Zn iyo stoichiometric ahaan isku qasan.
2. Diyaarinta Wakiilka Gaadiidka: crystals iodine-nadiifinta sare leh (nadiifin ≥99.99%), qiyaasta 5-10mg/cm³ mugga tuubada falcelinta.
3. Daawaynta Quartz Tube: Waxay la mid tahay habka falcelinta gobolka adag, laakiin tuubooyinka quartz ee dheer (300-400mm) ayaa loo baahan yahay.

3.2.2 Tuubbada Load

1. Meelaynta Walxaha: Dhig budada ZnTe ama isku dhafka Zn+ Te ee hal daraf ee tuubada quartz.
2. Ku darida Iodine: Ku dar kiristaalo iodine tuubada quartz ee sanduuqa galoofka.
3. Ka bixitaan: U guur ≤10⁻³ Pa.
4. Shaabadeynta: Ku xidh ololka hydrogen-oxygen, adigoo tuubada ka dhigaysa mid siman.

3.2.3 Dejinta heerkulbeegga heerkulbeegga

1. Heerkulka Aagga Kulul: Dhig ilaa 850-900°C.
2. Heerkulka Aagga Qabow: Dhig ilaa 750-800°C.
3. Dhererka Aagga Gradient: Qiyaastii 100-150mm.

3.2.4 Habka Kobaca

1. Marxaladda Koowaad: Kuleyl ilaa 500°C at 3°C/daqiiqo, hay 2 saacadood si aad ugu oggolaato falcelinta bilowga ah inta u dhaxaysa iodine iyo alaabta ceeriin.
2. Marxaladda Labaad: Ku sii wad kuleylinta heerkulka loo dejiyay, ilaali heerkulka heerkulka, oo kori 7-14 maalmood.
3. Qaboojinta: Kadib dhamaystirka koritaanka, ku qabooji heerkulka qolka 1 ° C/daqiiqo.

3.2.5 Aruurinta Alaabta

1. Furitaanka Tube: Ku fur tuubada quartz sanduuqa galoofyada.
2. Aruurinta: Uruuri hal kiristaalo ZnTe dhamaadka qabowga.
3. Nadiifinta: Si Ultrasonically ku nadiifi ethanol anhydrous ilaa 5 daqiiqo si aad meesha uga saarto iodine oogada ku jirta.

3.3 Qodobbada Xakamaynta Habka

1. Xakamaynta Qadarka Iodine: Isku-duubnaanta iodine waxay saamaysaa heerka gaadiidka; qiyaasta ugu fiican waa 5-8mg/cm³.
2. Heerkulka Heerkulka: Ku ilaali qulqulka 50-100 ° C.
3. Waqtiga koritaanka: Caadi ahaan 7-14 maalmood, taas oo ku xidhan cabbirka crystal ee la doonayo.

3.4 Falanqaynta Faa'iidooyinka iyo Khasaaraha

Faa'iidooyinka:

• Hal kiristaalo oo tayo sare leh ayaa la heli karaa
• Cabbirrada crystal ka weyn
• daahirnimo sare

Khasaaraha:

• Wareegyada koritaanka dheer
• Shuruudaha qalabka sare
• Waxsoosaarka hooseeya

4. Habka Xalka Ku Salaysan ee ZnTe Nanomaterial Synthesis

4.1 Mabda'a

Hababka xalka ku saleysan ayaa xakameynaya falcelinta horudhaca ee xalka si loogu diyaariyo nanoparticles ZnTe ama nanowires. Falcelinta caadiga ah waa:

Zn²⁺ + HTe⁻ + OH⁻ → ZnTe + H₂O

4.2 Habka Faahfaahinta

4.2.1 Diyaarinta Reagent

1. Isha Zinc: Zinc acetate (Zn(CH₃COO)₂ · 2H₂O), daahirnimada ≥99.99%.
2. Isha Tellurium: Tellurium dioxide (TeO₂), daahirsanaanta ≥99.99%.
3. Wakiilka Dhimista: Sodium borohydride (NaBH₄), nadiifnimada ≥98%.
4. Xalalka: Biyo deionized, ethylenediamine, ethanol.
5. Surfactant: Cetyltrimethylammonium bromide (CTAB).

4.2.2 Diyaarinta Hordhaca Tellurium

1. Diyaarinta Xalka: Ku mil 0.1mmol TeO₂ 20 ml oo biyo ah.
2. Falcelinta Dhimista: Ku dar 0.5mmol NaBH₄, ku walaaq magnetically 30 daqiiqo si aad u dhaliso xalka HTe⁻.
   TeO₂ + 3BH₄⁻ + 3H₂O → HTe⁻ + 3B(OH)₃ + 3H₂↑
3. Jawiga Ilaalinta: Ilaali socodka nitrogen si aad uga hortagto oksaydhka.

4.2.3 ZnTe Nanoparticle Synthesis

1. Diyaarinta Xalka Zinc: Ku milmi 0.1mmol zinc acetate 30ml ethylenediamine.
2. Dareen-celinta Isku-dhafka: Si tartiib ah ugu dar xalka HTe⁻ xalka zinc, ka fal celi 80 ° C ilaa 6 saacadood.
3. Centrifugation: falcelinta ka dib, centrifuge at 10,000rpm 10 daqiiqo si aad u soo ururiso alaabta.
4. Dhaqidda: Ku-dhaqidda beddelka ah ee ethanol iyo biyo la miiray saddex jeer.
5. Qallajinta: Fakuum qallaji 60°C ilaa 6 saacadood.

4.2.4 ZnTe Nanowire Synthesis

1. Ku darida Qaababka: Ku dar 0.2g CTAB xalka zinc.
2. Dareen-celinta Hydrothermal: Ku wareeji xalka isku-dhafka ah 50ml Teflon-lineed autoclave, ka fal celi 180 ° C ilaa 12 saacadood.
3. Processing ka dib: Waxa la mid ah nanoparticles.

4.3 Hagaajinta Halbeegga Habraaca

1. Xakamaynta heerkulka: 80-90 ° C ee nanoparticles, 180-200 ° C nanowires.
2. Qiimaha pH: Ku hay inta u dhaxaysa 9-11.
3. Waqtiga falcelinta: 4-6 saacadood ee nanoparticles, 12-24 saacadood nanowires.

4.4 Falanqaynta Faa'iidooyinka iyo Khasaaraha

Faa'iidooyinka:

• Dareen-celinta heerkulka hooseeya, tamarta-badbaadinta
• Qaab-dhismeedka iyo cabbirka la xakameyn karo
• Ku habboon wax soo saarka ballaaran

Khasaaraha:

• Alaabooyinka waxaa ku jiri kara wasakh
• Waxay u baahan tahay habayn ka dib
• Tayada crystal hoose

5. Molecular Beam Epitaxy (MBE) ee loogu talagalay diyaarinta filimka khafiifka ah ee ZnTe

5.1 Mabda'a

MBE waxa ay kortaa ZnTe filimada khafiifka ah ee hal-crystal ah iyada oo hagaya laydhka molecular ee Zn iyo Te oo dulsaar substrate hoos yimaada xaaladaha faakuumka aadka u sarreeya, si sax ah u kontaroolaya saamiga qulqulka iftiinka iyo heerkulka substrate-ka.

5.2 Habka Faahfaahinta

5.2.1 Diyaarinta Nidaamka

1. Nidaamka Vacuum: Base vacuum ≤1×10⁻⁸Pa.
2. Isha Diyaarinta:
   • Isha Zinc: 6N Zinc nadiif ah oo nadiif ah oo ku jira BN crucible.
   • Isha Tellurium: 6N tellurium-nadiifinta sare ee PBN crucible.
3. Diyaarinta Substrate:
   • GaAs (100) substrate sida caadiga ah loo isticmaalo.
   • Nadiifinta substrate-ka: Nadiifinta dareeraha dabiiciga ah → etching aashitada → Biyo-luqashada → qallajinta nitrogen.

5.2.2 Habka Kobaca

1. Gaaska Substrate-ka ah: Dubi at 200 ° C ilaa 1 saac si aad uga saarto xayaysiisyada dusha sare.
2. Ka Saaridda oksaydhka: Kuleyl ilaa 580C, hayso 10 daqiiqo si aad uga saarto oksaydhyada dusha sare.
3. Kobaca Lakabka Buffer: Qabow ilaa 300°C, kori 10nm lakabka kaydinta ZnTe.
4. Kobaca Ugu Weyn:
   • Heerkulka substrate: 280-320 ° C.
   • Cadaadis u dhigma beam Zinc: 1 × 10⁻ Torr.
   • Cadaadiska u dhigma ee Tellurium: 2×10⁻ Torr.
   • Saamiga V/III ayaa lagu xakameeyay 1.5-2.0.
   • Heerka kobaca: 0.5-1μm/h
5. Annealing: Ka dib korriinka, ku rid heerkulka 250 ° C 30 daqiiqo.

5.2.3 Kormeerka gudaha

1. Kormeerka RHEED: Daawashada wakhtiga dhabta ah ee dib u dhiska dusha sare iyo qaabka korriinka.
2. Mass Spectrometry: La soco xoojinta laydhka molecular
3. Thermometry Infrared: Xakamaynta heerkulka substrate saxda ah.

5.3 Qodobbada Xakamaynta Habka

1. Xakamaynta heerkulka: heerkulka substrate wuxuu saameeyaa tayada crystal iyo qaab-dhismeedka dusha sare.
2. Beam Flux Ratio: Saamiga Te/Zn wuxuu saameeyaa noocyada cilladaha iyo uruurinta.
3. Heerka kobaca: Heerarka hoose waxay hagaajiyaan tayada crystal.

5.4 Falanqaynta Faa'iidooyinka iyo Khasaaraha

Faa'iidooyinka:

• Halabuurka saxda ah iyo xakamaynta doping-ka.
• Filimaan hal-crystal ah oo tayo sare leh.
• Meelo siman oo siman waa la gaari karaa.

Khasaaraha:

• Qalab qaali ah.
• Heerarka kobaca oo gaabis ah.
• Waxay u baahan tahay xirfado hawleed heersare ah.

6. Hababka kale ee Synthesis

6.1 Kaydinta Uumiga Kiimikada (CVD)

1. Horudhacayaasha: Diethylzinc (DEZn) iyo diisopropyltelluride (DIPTe).
2. Heerkulka falcelinta: 400-500C.
3. Gaaska Qaadaha: Nayroojiin nadiif ah oo sarreeya ama hydrogen.
4. Cadaadis: Atmospheric ama cadaadis hoose (10-100Torr).

6.2 Uumiga kulaylka

1. Waxyaabaha laga soo xigtay: Budada ZnTe oo nadiif ah oo aad u sareysa.
2. Heerka Vacuum: ≤1×10⁻ Pa.
3. Heerkulka uumiga: 1000-1100C.
4. Heerkulka substrate: 200-300C.

7. Gabagabo

Waxaa jira habab kala duwan oo loo sameeyo zinc telluride, mid kastaa wuxuu leeyahay faa'iidooyin iyo faa'iido darrooyin u gaar ah. Dareen-celinta adag ee dawlad-goboleedka waxay ku habboon tahay diyaarinta walxaha bulk, gaadiidka uumiga wuxuu keenaa kiristaalo tayo sare leh, hababka xalku waxay ku habboon yihiin nanomaterials, iyo MBE waxaa loo isticmaalaa filimyo khafiif ah oo tayo sare leh. Codsiyada wax ku oolka ah waa in ay doortaan habka ku habboon ee ku saleysan shuruudaha, iyada oo si adag loo xakameynayo cabbirrada habka si loo helo wax-qabadka sare ee ZnTe alaabta. Tilmaamaha mustaqbalka waxaa ka mid ah isku-dhafka heerkulka hooseeya, xakamaynta qaab-dhismeedka, iyo hagaajinta habka doping.